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硒化温度对SnSe2薄膜材料性能的影响
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作者 孙铖 沈鸿烈 +2 位作者 高凯 林宇星 陶海军 《半导体光电》 CAS 北大核心 2019年第4期523-527,533共6页
采用射频磁控溅射加硒化的两步法在超白玻璃衬底上生长SnSe2薄膜,采用XRD、光学透过谱、Raman光谱、XPS和SEM等方法对薄膜进行性能表征。通过设置不同的硒化温度,研究不同硒化温度对所得薄膜相结构、物相与组分、表面形貌等性能的影响... 采用射频磁控溅射加硒化的两步法在超白玻璃衬底上生长SnSe2薄膜,采用XRD、光学透过谱、Raman光谱、XPS和SEM等方法对薄膜进行性能表征。通过设置不同的硒化温度,研究不同硒化温度对所得薄膜相结构、物相与组分、表面形貌等性能的影响。结果表明:350℃,40min硒化所得薄膜为片状晶粒,光学带隙为1.46eV,相结构和均匀性等性能在该硒化条件下均为最佳。 展开更多
关键词 薄膜材料 SnSe2薄膜 硒化温度 光学带隙
Sliding wear behavior of fully nanotwinned Cu alloys
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作者 Jianfeng YAN Andrew LINDO +1 位作者 Ruth SCHWAIGER Andrea MHODGE 《摩擦(英文版)》 CSCD 2019年第3期260-267,共8页
Highly nanotwinned(NT) metals have advantages such as high strength,good ductility,favorable corrosion resistance,and thermal stability.It has been demonstrated that the introduction of high density NT microstructures... Highly nanotwinned(NT) metals have advantages such as high strength,good ductility,favorable corrosion resistance,and thermal stability.It has been demonstrated that the introduction of high density NT microstructures can enhance the tribological properties of metals.However,the influence of the microstructure and the composition of NT alloys on the tribological behavior are not clear.In this work,the sliding wear behavior of fully NT materials,specifically Cu-Al and Cu-Ni alloys,are studied by a nanoscratch technique using a nanoindenter.The effects of microstructure and chemical composition on the wear properties are also studied.The results show that the chemical composition has an obvious influence on the wear resistance and microstructural deformation.For NT Cu-Al alloys,the hardness and sliding wear resistance improve with increased Al content from Cu-2 wt.%Al to Cu-6 wt.%Al.NT Cu-10 wt.%Ni alloy shows even better wear resistance than Cu-6 wt.%Al.The microstructural analysis shows that NT Cu alloys with higher wear resistance correspond to a smaller deformation-affected zone.The improvement of sliding wear properties of Cu-Al alloys with higher Al content may be ascribed to their decreased stacking fault energy.NT Cu-Ni alloy shows better wear resistance than Cu-Al alloy,this may be related to the formation of intermetallic compounds in Cu-Al system.This study broadens the knowledge about tribological properties of NT materials and provides a potential method to optimize their sliding wear resistance by altering the chemical composition of NT Cu alloys. 展开更多
关键词 nanotwinned ALLOYS THIN FILM STACKING FAULT energy TRIBOLOGY
Photodetectors based on two-dimensional materials and organic thin-film heterojunctions
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作者 韩嘉悦 王军 《中国物理B:英文版》 SCIE EI CAS CSCD 2019年第1期39-51,共13页
High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dim... High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dimensional materials(which have tunable optical absorption and high carrier mobility) with organic materials(which are abundant with low cost, high flexibility and large-area scalability) to form thin-film heterojunctions, high-responsivity photodetectors could be predicted with fast response speed in a wide spectra region.In this review, we give a comprehensive summary of photodetectors based on two-dimensional materials and organic thin-film heterojunctions, which includes hybrid assisted enhanced devices, single-layer enhanced devices, vertical heterojunction devices and tunable vertical heterojunction devices. We also give a systematic classification and perspectives on the future development of these types of photodetectors. 展开更多
关键词 PHOTODETECTORS TWO-DIMENSIONAL MATERIALS ORGANIC thin film HETEROJUNCTION
Thin-film growth behavior of non-planar vanadium oxide phthalocyanine
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作者 刘天娇 夏华艳 +3 位作者 刘标 Tim S Jones 方梅 阳军亮 《中国物理B:英文版》 SCIE EI CAS CSCD 2019年第8期369-375,共7页
The thin film properties of organic semiconductors are very important to the device performance.Herein,non-planar vanadyl phthalocyanine(VOPc)thin films grown on rigid substrates of indium tin oxide,silicon dioxide,an... The thin film properties of organic semiconductors are very important to the device performance.Herein,non-planar vanadyl phthalocyanine(VOPc)thin films grown on rigid substrates of indium tin oxide,silicon dioxide,and flexible substrate of kapton by organic molecular beam deposition under vacuum conditions are systematically studied via atomic force microscopy and x-ray diffraction.The results clearly reveal that the morphology and grain size are strongly dependent on the substrate temperature during the process of film deposition.Meanwhile,the VOPc films with the structure of phase I or phase II can be modulated via in situ annealing and post-annealing temperature.Furthermore,the crystalline structure and molecular orientation of vapor-deposited VOPc can be controlled using molecular template layer 3,4,9,10-perylenetetracarboxylic dianhydride(PTCDA),the VOPc film of which exhibits the phase I structure.The deep understanding of growth mechanism of non-planar VOPc film provides valuable information for controlling structure-property relationship and accelerates the application in electronic and optoelectronic devices. 展开更多
关键词 organic SEMICONDUCTOR THIN film VANADYL phthalocyanine(VOPc) growth BEHAVIOR
AlCrTaTiZrMo高熵合金氮化物扩散阻挡层的制备与表征 预览
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作者 李荣斌 李旻旭 +2 位作者 蒋春霞 李炳毅 李倩倩 《表面技术》 EI CAS CSCD 北大核心 2019年第6期125-129,166共6页
目的制备15 nm的(AlCrTaTiZrMo)N六元高熵合金氮化物薄膜,并对其扩散阻挡性能进行表征。方法使用直流磁控溅射设备在单晶硅上沉积(Al Cr Ta Ti Zr Mo)N高熵合金氮化物薄膜,然后在薄膜上沉积150 nm的Cu,形成Cu/(AlCrTaTiZrMo)N/Si结构。... 目的制备15 nm的(AlCrTaTiZrMo)N六元高熵合金氮化物薄膜,并对其扩散阻挡性能进行表征。方法使用直流磁控溅射设备在单晶硅上沉积(Al Cr Ta Ti Zr Mo)N高熵合金氮化物薄膜,然后在薄膜上沉积150 nm的Cu,形成Cu/(AlCrTaTiZrMo)N/Si结构。在600℃下,对该结构进行不同时间的退火处理,使用X射线衍射仪(XRD)、四探针测试仪(FPP)、原子力显微镜(AFM)和场发射扫描电子显微镜(FESEM)研究薄膜成分及退火时间对薄膜组织结构、表面形貌、方块电阻的影响,研究其扩散阻挡性。结果高熵合金氮化物薄膜与基体Si和Cu的结合性较好。沉积态高熵合金氮化物薄膜为非晶结构,表面光滑平整,方块电阻阻值较低。在600℃下经1h退火后,薄膜仍为非晶结构,表面发生粗化。随着退火时间增加,5h退火后,结构中出现少量纳米晶,大部分仍为非晶,表面粗糙度增加。退火7 h后,结构没有发生变化,仍为非晶包裹纳米晶结构,Cu表面生成部分岛状物,方块电阻阻值仍然较低,且无Cu-Si化合物生成,证明(AlCrTaTiZrMo)N高熵合金氮化物薄膜在长时间退火处理后,仍能保持良好的铜扩散阻挡性。结论 15nm的(AlCrTaTiZrMo)N高熵合金氮化物薄膜在600℃下退火7h后,其非晶包裹纳米晶的结构能有效阻挡Cu的扩散,表现出了优异的热稳定性与扩散阻挡性。 展开更多
关键词 高熵合金 磁控溅射 扩散阻挡层 CU互连 退火 薄膜
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热蒸发沉积TiO2薄膜的光学及激光损伤特性
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作者 徐均琪 李候俊 +3 位作者 李绵 王建 苏俊宏 基玛·格拉索夫 《真空》 CAS 2019年第1期39-44,共6页
采用电子束热蒸发技术,用不同沉积速率制备了TiO2薄膜。根据透射率谱计算了薄膜的光学带隙,采用椭偏法测量了薄膜的折射率、消光系数及厚度,分析了薄膜内部的电场强度分布,对其激光损伤特性进行了研究。结果表明,在所研究的工艺参数范围... 采用电子束热蒸发技术,用不同沉积速率制备了TiO2薄膜。根据透射率谱计算了薄膜的光学带隙,采用椭偏法测量了薄膜的折射率、消光系数及厚度,分析了薄膜内部的电场强度分布,对其激光损伤特性进行了研究。结果表明,在所研究的工艺参数范围内,TiO2薄膜的光学带隙比较稳定,随沉积速率的变化并不显著,其值大小在3.95eV-3.97eV。当沉积速率从0.088nm/s,0.128nm/s增加到0.18nm/s时,薄膜折射率从1.9782,1.9928,升高到2.0021(波长1064nm),但当沉积速率继续增加到0.327nm/s时,折射率反而降低到1.9663,薄膜的消光系数随着沉积速率的增加单调增加。采用同一高能激光损伤薄膜后,当沉积速率较低时制备薄膜的损伤斑大小基本一致,但以0.327nm/s较高速率制备的薄膜,其损伤斑明显增大。高沉积速率下制备的TiO2薄膜的吸收较大,激光损伤阈值较低。 展开更多
关键词 薄膜 TIO2 光学带隙 折射率 激光损伤阈值 电场强度
涂层材料表面硬度温度相关性理论模型 预览
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作者 麻建坐 曹晓峰 彭钿忠 《表面技术》 EI CAS CSCD 北大核心 2019年第1期62-68,共7页
目的理论表征涂层材料温度相关性表面硬度。方法在材料温度相关性强度理论表征最新研究成果基础上,结合材料硬度与强度的定量关系,综合考虑涂层材料制备温度和使役温度对材料力学性能的影响,建立了涂层材料温度相关性表面硬度理论表征... 目的理论表征涂层材料温度相关性表面硬度。方法在材料温度相关性强度理论表征最新研究成果基础上,结合材料硬度与强度的定量关系,综合考虑涂层材料制备温度和使役温度对材料力学性能的影响,建立了涂层材料温度相关性表面硬度理论表征模型。结果该理论表征模型建立了不同温度下涂层材料表面硬度与参考温度下的表面硬度、温度相关性弹性模量、残余热应力、温度、材料熔点等之间的定量关系,利用建立的模型,可以由任意参考温度下的涂层材料表面硬度预测不同温度下的涂层材料表面硬度。为了验证模型的正确性,采用建立的理论表征模型,分别预测了碳化硼、碳化硅、类金刚石、钛合金、氧化镍等涂层材料的温度相关性表面硬度,并与实验测试结果进行了对比,结果表明理论预测值与实验值具有很好的一致性。结论建立的理论表征模型可以有效地预测不同温度下的涂层材料表面硬度,为涂层材料的温度相关性硬度理论预测提供了途径。 展开更多
关键词 涂层 表面硬度 温度相关性 理论模型 预测
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Synthesis of free-standing Ga2O3 films for flexible devices by water etching of Sr3Al2O6 sacrificial layers
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作者 王霞 吴真平 +5 位作者 崔尉 支钰崧 李志鹏 李培刚 郭道友 唐为华 《中国物理B:英文版》 SCIE EI CAS CSCD 2019年第1期166-170,共5页
Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga2O3 ... Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga2O3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga2O3 thin films using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. The obtained Ga2O3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga2O3solar-blind UV photodetector was fabricated by transferring the free-standing Ga2O3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga2O3 photodetector were not sensitive to bending of the device. The free-standing Ga2O3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices. 展开更多
关键词 FREE-STANDING GA2O3 thin film CRYSTALLINE Sr3Al2O6 FLEXIBLE PHOTODETECTOR
Phase diagrams and magnetic properties of the mixed spin-1 and spin-3/2 Ising ferromagnetic thin film: Monte Carlo treatment
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作者 B Boughazi M Boughrara M Kerouad 《中国物理B:英文版》 SCIE EI CAS CSCD 2019年第2期414-419,共6页
Phase diagrams and magnetic properties of the mixed spin-1 and spin-3/2 Ising film with different single-ion anisotropies are investigated, by the use of Monte Carlo simulation based on heat bath algorithms. The effec... Phase diagrams and magnetic properties of the mixed spin-1 and spin-3/2 Ising film with different single-ion anisotropies are investigated, by the use of Monte Carlo simulation based on heat bath algorithms. The effects of the crystal-fields and the surface coupling on the phase diagrams are investigated in detail and the obtained phase diagrams are presented. Depending on the Hamiltonian parameters, the system exhibits both second-and first-order phase transitions besides tricritical point, triple point, and isolated critical end point. 展开更多
关键词 Monte Carlo simulation THIN film phase DIAGRAMS MAGNETIC properties
聚酰亚胺薄膜旋涂工艺及其抗电击穿性能 预览
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作者 梁军生 杨金鹤 +2 位作者 张小辉 胡亚明 王大志 《传感器与微系统》 CSCD 2019年第4期4-7,共4页
采用旋涂法制备了高质量的聚酰亚胺薄膜,研究了薄膜厚度与旋涂转速之间的关系;对不同厚度的旋涂薄膜进行了电击穿实验,探讨了膜厚对击穿性能的影响。结果表明:聚酰亚胺薄膜的厚度与旋转速度平方根的倒数(ω-1/2)呈线性正相关,通过控制... 采用旋涂法制备了高质量的聚酰亚胺薄膜,研究了薄膜厚度与旋涂转速之间的关系;对不同厚度的旋涂薄膜进行了电击穿实验,探讨了膜厚对击穿性能的影响。结果表明:聚酰亚胺薄膜的厚度与旋转速度平方根的倒数(ω-1/2)呈线性正相关,通过控制转速可获得不同膜厚;薄膜越厚,击穿电压越高,但其平均击穿强度越低。在280℃的亚胺化条件下,旋涂薄膜的最高击穿电压为2 370 V,最大击穿场强为286. 33 k V/mm,可满足大多数微系统对绝缘性能的要求。 展开更多
关键词 聚酰亚胺 薄膜 旋涂 电击穿
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液相外延生长法层层组装金属-有机框架薄膜 预览
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作者 谷志刚 《功能高分子学报》 CAS CSCD 北大核心 2019年第5期533-540,共8页
作为新一代的多孔材料,金属-有机框架(MOFs)由于具有晶体结构多样性、比表面积高、热稳定性较好以及功能可调等优点而受到人们的广泛关注。如何制备高质量的MOFs薄膜并将其功能化应用是当前的研究热点。本综述将介绍一类通过液相外延生... 作为新一代的多孔材料,金属-有机框架(MOFs)由于具有晶体结构多样性、比表面积高、热稳定性较好以及功能可调等优点而受到人们的广泛关注。如何制备高质量的MOFs薄膜并将其功能化应用是当前的研究热点。本综述将介绍一类通过液相外延生长法在功能化基底表面上层层组装MOFs薄膜(SURMOFs),并重点总结了SURMOFs的制备途径,包括层层浸渍法、层层泵式法、层层喷雾法、层层旋涂法以及层层流动法,从而为制备高质量SURMOFs提供了保障,将更有利于MOFs材料在传感器和器件等领域的应用。 展开更多
关键词 金属-有机框架 薄膜 液相外延 层层组装
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Interlayer exchange coupling in (Ga,Mn)As ferromagnetic semiconductor multilayer systems 预览
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作者 Sanghoon Lee Sunjae Chung +3 位作者 Hakjoon Lee Xinyu Liu M. Dobrowolska J. K. Furdyna 《半导体学报:英文版》 EI CAS CSCD 2019年第8期28-35,共8页
This paper describes interlayer exchange coupling (IEC) phenomena in ferromagnetic multilayer structures, focusing on the unique IEC features observed in ferromagnetic semiconductor (Ga,Mn)As-based systems. The depend... This paper describes interlayer exchange coupling (IEC) phenomena in ferromagnetic multilayer structures, focusing on the unique IEC features observed in ferromagnetic semiconductor (Ga,Mn)As-based systems. The dependence of IEC on the structural parameters, such as non-magnetic spacer thickness, number of magnetic layers, and carrier density in the systems has been investigated by using magnetotransport measurements. The samples in the series show both a typical anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR)-like effects indicating realization of both ferromagnetic (FM) and antiferromagnetic (AFM) IEC in (Ga,Mn)As-based multilayer structures. The results revealed that the presence of carriers in the nonmagnetic spacer is an important factor to realize AFM IEC in this system. The studies further reveal that the IEC occurs over a much longer distance than predicted by current theories, strongly suggesting that the IEC in (Ga,Mn)As-based multilayers is a long-range interaction. Due to the long-range nature of IEC in the (Ga,Mn)As-based systems, the next nearest neighbor (NNN) IEC cannot be ignored and results in multi-step transitions during magnetization reversal that correspond to diverse spin configurations in the system. The strength of NNN IEC was experimentally determined by measuring minor loops that correspond to magnetization flips in specific (Ga,Mn)As layer in the multilayer system. 展开更多
关键词 THIN film CRYSTAL FERROMAGNETIC SEMICONDUCTOR INTERLAYER COUPLING
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太赫兹片上系统中低温砷化镓薄膜光电导天线的研究 预览
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作者 张聪 苏波 +3 位作者 张宏飞 武亚雄 何敬锁 张存林 《光谱学与光谱分析》 SCIE EI CAS CSCD 北大核心 2019年第10期3308-3312,共5页
太赫兹时域光谱技术是一种在太赫兹频段内,广泛应用的光谱测量技术。这种技术可以用于许多物质的频谱分析,对于研究化学、半导体与生物分子等领域有着无可比拟的作用。然而用该系统进行样品探测时,受回波的影响频谱分辨率较低;受太赫兹... 太赫兹时域光谱技术是一种在太赫兹频段内,广泛应用的光谱测量技术。这种技术可以用于许多物质的频谱分析,对于研究化学、半导体与生物分子等领域有着无可比拟的作用。然而用该系统进行样品探测时,受回波的影响频谱分辨率较低;受太赫兹波光斑大小以及待测样品与电磁波相互作用距离长短的影响,样品消耗量较多,并且整个系统的占用空间较大,这些局限性都限制了太赫兹时域光谱系统的进一步发展。为了突破太赫兹时域光谱系统的局限性,设计了一种将太赫兹泵浦区、探测区和传输波导集成到一个硅片上的太赫兹片上系统,该系统不仅能够解决上述系统的局限性,还能够省去样品测量前的光路准直环节,使样品的测量过程更加简便,同时集成化的系统也很大程度上提高了太赫兹波传输的稳定性。在太赫兹片上系统中,泵浦区和探测区的光电导天线是由低温砷化镓和金属电极制成,由于受到太赫兹片上系统的高度集成化和低温砷化镓晶体生长条件的限制,如何制备出低温砷化镓半导体薄膜衬底,并将其转移与键合,是太赫兹片上系统研制过程中的关键环节。首先利用分子束外延(MBE)技术制备出由半绝缘砷化镓、砷化镓缓冲层、砷化铝牺牲层和低温砷化镓层构成的外延片,然后利用盐酸溶液与砷化铝和低温砷化镓反应速度差别较大的原理,将200nm厚的AlAs牺牲层腐蚀掉,从而得到2μm厚的低温砷化镓薄膜。为了更加高效并且完整地得到低温砷化镓薄膜,研究了盐酸溶液在不同温度和不同浓度下与AlAs牺牲层的选择性腐蚀速率的关系。给出了低温砷化镓薄膜制备过程中盐酸的最佳体积比浓度和最佳温度,即在73℃下13.57%的盐酸溶液中进行砷化铝牺牲层的腐蚀。相比于已有工艺,这种腐蚀方法对实验设备的要求较低并且具有较高的安全性。最后,将单层低温� 展开更多
关键词 太赫兹 低温砷化镓 薄膜 腐蚀 光电导天线
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An efficient and innovative catalytic reactor for VOCs emission control
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作者 Achraf El Kasmi Guan-Fu Pan +1 位作者 Ling-Nan Wu Zhen-Yu Tian 《科学通报:英文版》 SCIE EI CSCD 2019年第9期625-633,共9页
Efficient mixing and thermal control are important in the flow reactor for obtaining a high product yield and selectivity.Here,we report a heterogeneous chemical kinetic study of propene oxidation within a newly desig... Efficient mixing and thermal control are important in the flow reactor for obtaining a high product yield and selectivity.Here,we report a heterogeneous chemical kinetic study of propene oxidation within a newly designed catalytic jet-stirred reactor(CJSR).To better understand the interplay between the catalytic performances and properties,the CuO thin films have been characterized and the adsorbed energies of propene on the adsorbed and lattice oxygen were calculated using density functional theory(DFT)method.Structure and morphology analyses revealed a monoclinic structure with nano-crystallite size and porous microstructure,which is responsible for holding an important quantity of adsorbed oxygen.The residence time inside the flow CJSR(1.12–7.84 s)makes it suitable for kinetic study and gives guidance for scale-up.The kinetic study revealed that using CJSR the reaction rate increases with O2concentration that is commonly not achievable for catalytic flow tube reactor,whereas the reaction rate tends to increase slightly above 30%of O2due to the catalyst surface saturation.Moreover,DFT calculations demonstrated that adsorbed oxygen is the most involved oxygen,and it has found that the pathway of producing propene oxide makes the reaction of C3H6over CuO surface more likely to proceed.Accordingly,these findings revealed that CJSR combined with theoretical calculation is suitable for kinetic study,which can pave the way to investigate the kinetic study of other exhaust gases. 展开更多
关键词 Novel CATALYTIC jet-stirred REACTOR HETEROGENEOUS KINETIC study EXHAUST emission CONTROL CuO thin film catalyst DFT calculation
激光器芯片烧结用AuSn薄膜焊料制造技术研究 预览
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作者 刘凯 罗燕 +2 位作者 任卫鹏 王立春 彭斌 《电子元件与材料》 CAS CSCD 北大核心 2019年第8期106-110,共5页
共晶成分的金锡合金焊料AuSn20,具有较高的热导率、剪切强度、抗热疲劳性和抗腐蚀性,在高功率电子器件和光电子器件封装中应用广泛.本文在AlN陶瓷基板上,通过分层电镀Au/Sn/Au三层薄膜并合金化的方法,在AlN陶瓷表面制备了一种预制AuSn2... 共晶成分的金锡合金焊料AuSn20,具有较高的热导率、剪切强度、抗热疲劳性和抗腐蚀性,在高功率电子器件和光电子器件封装中应用广泛.本文在AlN陶瓷基板上,通过分层电镀Au/Sn/Au三层薄膜并合金化的方法,在AlN陶瓷表面制备了一种预制AuSn20合金焊料的基板.分析了焊料的成分及性能,结果满足国军标GJB 548B-2005《微电子器件试验方法和程序》的剪切强度要求.用该基板封装激光二极管后达到设计功率,光功率效率为35%. 展开更多
关键词 金锡 薄膜 分层电镀 共晶 合金化 激光二极管
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光伏太阳能电池进展 预览
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作者 蔡威 吴海燕 谢吴成 《广东化工》 CAS 2019年第1期84-85,83共3页
近些年来,自然资源日渐减少,环境污染日益严重,使得光伏产业迅猛发展。本文详细叙述了薄膜光伏电池的发展历程、种类和光伏电池的制备工艺,以及薄膜光伏电池产业发展的瓶颈问题,并对光伏产业进行了展望。
关键词 太阳能 光伏效应 光伏电池 薄膜
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SnS同质结太阳电池中的光生载流子产生、复合和输运机制研究 预览
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作者 林硕 陈焕庭 +10 位作者 潘华清 周锦荣 李细荣 熊传兵 林传金 王瑞敏 徐丹翔 翁丽丽 谢丽平 沈少武 禇佳娣 《牡丹江师范学院学报:自然科学版》 2019年第1期19-24,共6页
通过理论模拟研究SnS同质结太阳电池中的光生载流子产生、复合和输运机制.采用AMPS软件中的寿命模式和俘获截面模式,研究光生载流子的产生和复合,讨论分立能级和Gaussian能级的复合对电池性能的影响;对电池的光照非平衡态能带结构、内... 通过理论模拟研究SnS同质结太阳电池中的光生载流子产生、复合和输运机制.采用AMPS软件中的寿命模式和俘获截面模式,研究光生载流子的产生和复合,讨论分立能级和Gaussian能级的复合对电池性能的影响;对电池的光照非平衡态能带结构、内建电场分布和电流输运情况进行对比分析. 展开更多
关键词 模拟 SNS 太阳电池 同质结 薄膜
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Two-step growth of VSe2 films and their photoelectric properties
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作者 曾玉 张生利 +6 位作者 李秀玲 敖建平 孙云 刘玮 刘芳芳 高鹏 张毅 《中国物理B:英文版》 SCIE EI CAS CSCD 2019年第5期343-349,共7页
We put forward a two-step route to synthesize vanadium diselenide (VSe2),a typical transition metal dichalcogenide (TMD).To obtain the VSe2 film,we first prepare a vanadium film by electron beam evaporation and we the... We put forward a two-step route to synthesize vanadium diselenide (VSe2),a typical transition metal dichalcogenide (TMD).To obtain the VSe2 film,we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber.This method has the advantages of low temperature,is less time-consuming,has a large area,and has a stable performance.At 400℃ selenization temperature,we successfully prepare VSe2 films on both glass and Mo substrates.The prepared VSe2 has the characteristic of preferential growth along the c-axis,with low transmittance.It is found that the contact between Al and VSe2/Mo is ohmic contact.Compared to Mo substrate,lower square resistance and higher carrier concentration of the VSe2/Mo sample reveal that the VSe2 film may be a potential material for thin film solar cells or other semiconductor devices.The new synthetic strategy that is developed here paves a sustainable way to the application of VSe2 in photovoltaic devices. 展开更多
关键词 TWO-STEP ROUTE VSe2 SELENIZATION THIN FILM
Experimental study of laser lift-off of ultra-thin polyimide film for flexible electronics
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作者 BIAN Jing ZHOU LaoBoYang +4 位作者 WAN XiaoDong LIU MinXiao ZHU Chen HUANG YongAn YIN ZhouPing 《中国科学:技术科学英文版》 SCIE EI CAS CSCD 2019年第2期233-242,共10页
It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in i... It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off(LLO) process of ultra-thin(~ 2 μm) polyimide(PI)film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times(AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. 展开更多
关键词 laser LIFT-OFF INTERFACIAL PEELING DELAMINATION flexible ELECTRONICS thin film
Structures and local ferroelectric polarization switching properties of orthorhombic YFeO3 thin film prepared by a sol–gel method
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作者 张润兰 李帅帅 +2 位作者 陈长乐 韩立安 熊善新 《中国物理B:英文版》 SCIE EI CAS CSCD 2019年第3期357-361,共5页
Orthorhombic YFeO3 thin film was prepared on La0.67Sr0.33MnO3/LaAlO3 substrate by a sol-gel spin-coating method. The structures of the YFeO3/La0.67Sr0.33MnO3/LaAlO3(YFO/LSMO/LAO) sample were detected by x-ray diffract... Orthorhombic YFeO3 thin film was prepared on La0.67Sr0.33MnO3/LaAlO3 substrate by a sol-gel spin-coating method. The structures of the YFeO3/La0.67Sr0.33MnO3/LaAlO3(YFO/LSMO/LAO) sample were detected by x-ray diffraction pattern, Raman spectrometer, scanning electron microscopy, and atomic force microscope. The local ferroelectric polarization switching properties of the orthorhombic YFO film were confirmed by piezoresponse force microscopy(PFM) for the first time. The results show that the YFO film deposited on LSMO/LAO possesses orthorhombic structure,with ultra-fine crystal grains and flat surface. The leakage current of the YFO film is 8.39 × 10-4 A·cm-2 at 2 V,with its leakage mechanism found to be an ohmic behavior. PFM measurements indicate that the YFO film reveals weak ferroelectricity at room temperature and the local switching behavior of ferroelectric domains has been identified. By local poling experiment, polarization reversal in the orthorhombic YFO film at room temperature was further observed. 展开更多
关键词 MULTIFERROICS YFeO3 thin film ORTHORHOMBIC structure PIEZORESPONSE force MICROSCOPY
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