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通过离子液体选择性调控铜氧化物中的易失和非易失超导电性 认领
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作者 魏鑫健 李好博 +19 位作者 张庆华 李栋 秦明阳 许立 胡卫 郇庆 俞理 苗君 袁洁 朱北沂 Anna Kusmartseva Feo V.Kusmartsev Alejandro V.Silhanek 向涛 于伟强 林媛 谷林 于浦 陈其宏 金魁 《科学通报:英文版》 SCIE EI CAS CSCD 2020年第19期1607-1613,M0003,共8页
高效、可靠地调控铜氧化物超导体的超导态,对其在下一代电子学中的应用具有重要意义.本文研究了绝缘Pr2CuO4±δ(PCO)薄膜的离子液体调控行为,发现可以利用两种不同的调控机制分别诱导出易失和非易失的超导态.在正电场调控下,薄膜... 高效、可靠地调控铜氧化物超导体的超导态,对其在下一代电子学中的应用具有重要意义.本文研究了绝缘Pr2CuO4±δ(PCO)薄膜的离子液体调控行为,发现可以利用两种不同的调控机制分别诱导出易失和非易失的超导态.在正电场调控下,薄膜可以在超导态和非超导态之间可逆转换,这归因于载流子的掺杂效应.另外,对绝缘的样品进行负偏压的调控,当偏压加至-4 V时,样品的电阻明显增大.值得关注的是,一旦撤去栅极电压,样品获得了非易失的超导电性.高分辨扫描电子显微镜和原位X射线衍射实验的结果表明,负向调控过程修复了铜氧面中的氧空位.对于电子型铜氧化物而言,这是一种诱导超导电性的独特途径.在同一个铜氧化物母体中有效地调控易失和非易失超导电性,为超导电子器件和高温超导体中量子相变的研究提供了新的渠道. 展开更多
关键词 Parent cuprate Electron-doped copper oxide Superconducting thin film Ionic liquid gating Volatile and non-volatile superconductivity
Design,modelling,and simulation of a floating gate transistor with a novel security feature 认领
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作者 H.Zandipour M.Madani 《半导体学报:英文版》 EI CAS CSCD 2020年第10期33-37,共5页
This study proposes a new generation of floating gate transistors(FGT)with a novel built-in security feature.The new device has applications in guarding the IC chips against the current reverse engineering techniques,... This study proposes a new generation of floating gate transistors(FGT)with a novel built-in security feature.The new device has applications in guarding the IC chips against the current reverse engineering techniques,including scanning capacitance microscopy(SCM).The SCM measures the change in the C–V characteristic of the device as a result of placing a minute amount of charge on the floating gate,even in nano-meter scales.The proposed design only adds a simple processing step to the conventional FGT by adding an oppositely doped implanted layer to the substrate.This new structure was first analyzed theoretically and then a two-dimensional model was extracted to represent its C–V characteristic.Furthermore,this model was verified with a simulation.In addition,the C–V characteristics relevant to the SCM measurement of both conventional and the new designed FGT were compared to discuss the effectiveness of the added layer in masking the state of the transistor.The effect of change in doping concentration of the implanted layer on the C–V characteristics was also investigated.Finally,the feasibility of the proposed design was examined by comparing its I–V characteristics with the traditional FGT. 展开更多
关键词 floating gate transistor(FGT) scanning capacitance microscopy(SCM) metal–oxide–semiconductor(MOS)capacitance non-volatile memory(NVM) reverse engineering
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In-memory computing to break the memory wall 认领
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作者 黄晓合 刘春森 +1 位作者 姜育刚 周鹏 《中国物理B:英文版》 SCIE EI CAS CSCD 2020年第7期28-48,共21页
Facing the computing demands of Internet of things(IoT)and artificial intelligence(AI),the cost induced by moving the data between the central processing unit(CPU)and memory is the key problem and a chip featured with... Facing the computing demands of Internet of things(IoT)and artificial intelligence(AI),the cost induced by moving the data between the central processing unit(CPU)and memory is the key problem and a chip featured with flexible structural unit,ultra-low power consumption,and huge parallelism will be needed.In-memory computing,a non-von Neumann architecture fusing memory units and computing units,can eliminate the data transfer time and energy consumption while performing massive parallel computations.Prototype in-memory computing schemes modified from different memory technologies have shown orders of magnitude improvement in computing efficiency,making it be regarded as the ultimate computing paradigm.Here we review the state-of-the-art memory device technologies potential for in-memory computing,summarize their versatile applications in neural network,stochastic generation,and hybrid precision digital computing,with promising solutions for unprecedented computing tasks,and also discuss the challenges of stability and integration for general in-memory computing. 展开更多
关键词 in-memory computing non-volatile memory device technologies crossbar array
Advances in Research on Anti-tumor Active Components of Labiatae Plants 认领
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作者 Fei HAN Wei XIONG +3 位作者 Yicheng WANG Yi HUANG Huanhuan LIU Zhiyu ZHOU 《药用植物研究(英文版)》 2019年第1期1-6,9共7页
In recent years, the antibacterial and anti-inflammatory effects of the Labiatae plants have been widely recognized, and have been used in clinical practice, and their anti-tumor effects are also very significant, and... In recent years, the antibacterial and anti-inflammatory effects of the Labiatae plants have been widely recognized, and have been used in clinical practice, and their anti-tumor effects are also very significant, and receiving more and more attention. At present, malignant tumors are still the first killer threatening human health. Because of the long-term use of chemical anti-tumor drugs with certain drug resistance and obvious side effects, finding high-efficiency anti-tumor active ingredients from natural plants and Chinese herbal medicines has become a hot spot in the field of pharmacy. Literature survey indicates that the active ingredients in Labiatae plants have anti-tumor effects. Therefore, this paper summarized and discussed the anti-tumor types, mechanisms and active components of the Labiatae plants, so as to provide a basis and reference for the development of new anti-tumor drugs or preparations. 展开更多
关键词 ANTI-TUMOR LABIATAE PLANTS VOLATILE COMPONENTS Non-volatile COMPONENTS Study of common properties
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关联电子材料的自旋态限域调控与自旋电子器件应用研究进展 认领
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作者 孙继荣 张远波 +14 位作者 成昭华 孙阳 禹日成 刘邦贵 陈沅沙 殷立峰 肖江 吴骅 王文彬 闵泰 马飞 吴义政 金晓峰 赵海斌 沈健 《中国基础科学》 2019年第1期28-33,44共7页
关联电子材料具有丰富的自旋序,包括铁磁、反铁磁、亚铁磁、螺旋磁序等,这些自旋序与电子轨道态、电荷空间分布等其他量子态存在强烈耦合,因而可以通过外场来实现不同自旋序的时域和空域调控。相对于存在化学界面的传统异质结构,在关联... 关联电子材料具有丰富的自旋序,包括铁磁、反铁磁、亚铁磁、螺旋磁序等,这些自旋序与电子轨道态、电荷空间分布等其他量子态存在强烈耦合,因而可以通过外场来实现不同自旋序的时域和空域调控。相对于存在化学界面的传统异质结构,在关联电子材料中利用外场限域调控,可以实现无化学界面的不同自旋序结构的空间可控排列,从而构筑基于同一材料的新型自旋电子器件。本项目围绕关联电子体系多量子态的调控规律展开,通过自旋电子学与量子物理、表面物理以及电介质物理的交叉,探索具有多场(磁场、电场、光场、应变场)可控性的新型关联自旋电子材料,发展新型的多场调控技术,揭示自旋序与量子态耦合机理,设计新型自旋电子器件,进而实现在同一关联电子材料中集成非挥发性自旋存储与逻辑运算功能。 展开更多
关键词 非冯诺依曼架构 自旋电子学 关联电子材料 非易失性 自旋存储 逻辑运算
Extending SSD Lifespan with Comprehensive Non-Volatile Memory-Based Write Buffers 认领
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作者 Ziqi Fan Dongchul Park 《计算机科学技术学报:英文版》 SCIE EI CSCD 2019年第1期113-132,共20页
New non-volatile memory (NVM)technologies are expected to replace main memory DRAM (dynamic random access memory)in the near future.NAND flash technological breakthroughs have enabled wide adoption of solid state driv... New non-volatile memory (NVM)technologies are expected to replace main memory DRAM (dynamic random access memory)in the near future.NAND flash technological breakthroughs have enabled wide adoption of solid state drives (SSDs)in storage systems.However,flash-based SSDs,by nature,cannot avoid low endurance problems because each cell only allows a limited number of erasures.This can give rise to critical SSD reliability issues.Since many SSD write operations eventually cause many SSD erase operations,reducing SSD write traffic plays a crucial role in SSD reliability. This paper proposes two NVM-based buffer cache policies which can work together in different layers to maximally reduce SSD write traffic:a main memory buffer cache design named Hierarchical Adaptive Replacement Cache (H-ARC)and an internal SSD write buffer design named Write Traffic Reduction Buffer (WRB).H-ARC considers four factors (dirty,clean, recency,and frequency)to reduce write traffic and improve cache hit ratios in the host.WRB reduces block erasures and write traffic further inside an SSD by effectively exploiting temporal and spatial localities.These two comprehensive schemes significantly reduce total SSD write traffic at each different layer (i.e.,host and SSD)by up to 3x.Consequently,they help extend SSD lifespan without system performance degradation. 展开更多
关键词 BUFFER cache policy WRITE BUFFER non-volatile MEMORY solid state drive flash MEMORY
A non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack for in-situ storage applications 认领
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作者 Jingyu Li Heng Zhang +4 位作者 Yi Ding Jiayi Li Shuiyuan Wang David Wei Zhang Peng Zhou 《科学通报:英文版》 SCIE EI CSCD 2019年第20期1518-1524,共7页
The emergence of two-dimensional(2 D) materials has inspired academia in microelectronics to find a novel device structure to offer a potential technological route for increasing energy efficiency and processing speed... The emergence of two-dimensional(2 D) materials has inspired academia in microelectronics to find a novel device structure to offer a potential technological route for increasing energy efficiency and processing speed for data storage and computing at transistor level. Devices based on 2 D materials include logic gates and memories, each with their own unique features. However, integrating logic function and memory into a single device has barely been studied. Here, we report a non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack. The device can store charges after completing logic operation. The ratio of high and low current states during logic operations can exceed 105. The output current states during the logic and memory operations still have a two orders of magnitude distinction after 800 s, indicating that this device possesses the non-volatile characteristic. The device has potential applications for insitu memory applications, which makes it a possible candidate to break the ‘‘memory wall' at transistor level. 展开更多
关键词 AND GATE Non-volatile MEMORY Charge-trap GATE STACK IN-SITU MEMORY
Non-volatile constituents and pharmacology of Chimonanthus: A review 认领
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作者 SHU Ren-Geng WANG Yi-Li WANG Xiao-Min 《中国天然药物:英文版》 SCIE CAS CSCD 2019年第3期161-186,共26页
Chimonanthus plants widely distributed in southern area of China, which have a long history of edibles and medicine. Phytochemical investigations have shown that Chimonanthus produced 143 non-volatile constituents, in... Chimonanthus plants widely distributed in southern area of China, which have a long history of edibles and medicine. Phytochemical investigations have shown that Chimonanthus produced 143 non-volatile constituents, including alkaloids, flavonoids, terpenoids, coumarins and others, which exhibit significant anti-oxidant, anti-bacterial, anti-cancer, anti-inflammatory, antihyperglycemic, antihyperlipidemic and other biological activities. On the basis of systematic reviewing of literatures, this article overviews the non-volatile constituents and pharmacology of Chimonanthus from domestic and foreign over the last 30 years (until June 2018), and may provide a useful reference for the further development of Chimonanthus. 展开更多
关键词 CHIMONANTHUS Non-volatile constituents PHARMACOLOGY REVIEW
Theoretical assessment of hydrogen production and multicycle energy conversion via solar thermochemical cycle based on nonvolatile SnO2 认领
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作者 Mingkai Fu Huajun Xu +1 位作者 Haitao Ma Xin Li 《能源化学:英文版》 SCIE EI CAS CSCD 2019年第11期177-184,共8页
A kind of solar thermochemical cycle based on methanothermal reduction of SnO2 is proposed for H2 and CO production. We find that the oxygen release capacity and thermodynamic driven force for methanothermal reduction... A kind of solar thermochemical cycle based on methanothermal reduction of SnO2 is proposed for H2 and CO production. We find that the oxygen release capacity and thermodynamic driven force for methanothermal reduction of SnO2 are large, and suggest CH4 :SnO2 = 2:1 as the feasible reduction condition for achieving high purities of syngas and avoiding vaporization of produced Sn. Subsequently, the amount of H2 and energetic upgrade factors under different oxidation conditions are compared, in which excess water vapor is found beneficial for hydrogen production and fuel energetic upgradation. Moreover, the effect of incom plete recovery of SnO2 on the subsequent cycle is underscored and explained. After accounting for factors such as isothermal operation and cycle stability, CH4 :SnO2 = 2:1 and H2O:Sn = 4:1 are suggested for highest solar-to-fuel efficiency of 46.1% at nonisothermal condition, where the reduction and oxidation temperature are 1400 and 600 K, respectively. 展开更多
关键词 SnO2/Sn based solar-chemical cycle Hydrogen PRODUCTION Non-volatile redox Isothermal and NONISOTHERMAL operation SYNGAS PRODUCTION
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A novel non-volatile memory storage system for I/O-intensive applications 认领
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作者 Wen-bing HAN Xiao-gang CHEN +4 位作者 Shun-fen LI Ge-zi LI Zhi-tang SONG Da-gang LI Shi-yan CHEN 《信息与电子工程前沿:英文版》 SCIE EI CSCD 2018年第10期1291-1302,共12页
关键词 In-storage processing File SYSTEM Non-volatile memory (NVM) Storage SYSTEM I/O-intensive APPLICATIONS
聚酯亚胺无挥发浸渍树脂的性能及其在新能源汽车电机上的应用研究 认领 被引量:1
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作者 邹家桂 王君 +1 位作者 刘宗旺 张杰元 《绝缘材料》 CAS 北大核心 2018年第11期48-51,共4页
为解决常规苯乙烯和甲基苯乙烯体系的浸渍树脂在环保等方面的不足,采用不饱和聚酯亚胺、引发剂和无挥发活性稀释剂研制出聚酯亚胺无挥发浸渍树脂,并对其各项性能进行了研究。结果表明:聚酯亚胺无挥发浸渍树脂的常规性能可以满足新能源... 为解决常规苯乙烯和甲基苯乙烯体系的浸渍树脂在环保等方面的不足,采用不饱和聚酯亚胺、引发剂和无挥发活性稀释剂研制出聚酯亚胺无挥发浸渍树脂,并对其各项性能进行了研究。结果表明:聚酯亚胺无挥发浸渍树脂的常规性能可以满足新能源汽车电机的需求。采用该树脂制作的汽车电机样机具有电性能优异、工作温升低、高低温循环冲击不开裂等特点,可以满足新能源汽车电机运行的要求。 展开更多
关键词 无挥发 汽车电机 温升 高低温冲击
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Memory that never forgets:emerging nonvolatile memory and the implication for architecture design 认领
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作者 Guangyu Sun Jishen Zhao +2 位作者 Matt Poremba Cong XU Yuan Xie 《国家科学评论:英文版》 SCIE EI CSCD 2018年第4期577-592,共16页
In order to mitigate the problem of the ‘memory wall’, various emerging nonvolatile memory(NVM)technologies have been proposed to replace the traditional ones. These emerging NVMs include spin torque transfer random... In order to mitigate the problem of the ‘memory wall’, various emerging nonvolatile memory(NVM)technologies have been proposed to replace the traditional ones. These emerging NVMs include spin torque transfer random access memory, PCRAM, resistive random access memory, racetrack memory, etc.Compared to traditional memory technologies, they have the advantages of near-zero standby power, high storage density and nonvolatility, which make them competitive for future memory hierarchy design.However, it is inefficient to directly apply these NVMs in existing memory architectures. On the one hand,these NVMs have their own limitations, such as long write latency, high write energy, limited write numbers, etc. Thus, proper architecture modification is required to adopt them into the traditional memory hierarchy. On the other hand, the unique features of these NVMs allow new memory architectures in memory subsystems and also introduce new challenges to be solved at the same time. In this paper, we not only review various emerging NVMs but also study typical related work on these topics to investigate their implications for memory architecture design. 展开更多
关键词 non-volatile MEMORY CACHE MAIN MEMORY energy efficiency
A Survey of System Software Techniques for Emerging NVMs 认领
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作者 BAI Tongxin DONG Zhenjiang +3 位作者 CAI Manyi FAN Xiaopeng XU Chengzhong LIU Lixia 《中兴通讯技术:英文版》 2017年第1期35-42,共8页
The challenges of power consumption and memory capacity of computers have driven rapid development on non?volatile memories (NVM). NVMs are generally faster than traditional secondary storage devices, write persistent... The challenges of power consumption and memory capacity of computers have driven rapid development on non?volatile memories (NVM). NVMs are generally faster than traditional secondary storage devices, write persistently and many offer byte addressing capability. Despite these appealing features,NVMs are difficult to manage and program, which makes it hard to use them as a drop?in replacement for dynamic ran?dom?access memory (DRAM). Instead, a majority of mod?ern systems use NVMs through the IO and the file system abstractions. Hiding NVMs under these interfaces poses chal? lenges on how to exploit the new hardware’s performance potential in the existing system software framework. In this article, we survey the key technical issues arisen in this area and introduce several recently developed systems each of which offers novel solutions around these issues. 展开更多
关键词 non.volatile MEMORY PERSISTENT MEMORY FILE SYSTEM IO SYSTEM
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非易失性突触存储阵列及神经元电路的设计 认领
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作者 叶勇 亢勇 +3 位作者 景蔚亮 杜源 宋志棠 陈邦明 《微电子学与计算机》 CSCD 北大核心 2017年第11期1-5,共5页
传统的神经形态芯片一般采用SRAM阵列来存储突触权重,掉电后数据会丢失,且只能通过单一地址译码进行存取,不利于突触权重的更新.为此,本文基于40nm先进工艺并结合嵌入式相变存储器设计了一种非易失性突触存储阵列及神经元电路,为神经元... 传统的神经形态芯片一般采用SRAM阵列来存储突触权重,掉电后数据会丢失,且只能通过单一地址译码进行存取,不利于突触权重的更新.为此,本文基于40nm先进工艺并结合嵌入式相变存储器设计了一种非易失性突触存储阵列及神经元电路,为神经元的突触权重存储和更新提供了一种有效、高速和低功耗的解决方案. 展开更多
关键词 神经元 突触 非易失性 相变存储器 人工神经网络
Power-Aware Data Management Based on Hybrid RAM-NVM Memory for Smart Bracelet 认领
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作者 Jin-Yu Zhan Jun-Huan Yang +2 位作者 Wei Jiang Yi-Xin Li Yi-Ming Zhang 《电子科技学刊:英文版》 CAS CSCD 2017年第4期385-390,共6页
Wearable devices become popular because they can help people observe health condition.The battery life is the critical problem for wearable devices. The non-volatile memory (NVM) attracts attention in recent years bec... Wearable devices become popular because they can help people observe health condition.The battery life is the critical problem for wearable devices. The non-volatile memory (NVM) attracts attention in recent years because of its fast reading and writing speed, high density, persistence, and especially low idle power. With its low idle power consumption,NVM can be applied in wearable devices to prolong the battery lifetime such as smart bracelet. However, NVM has higher write power consumption than dynamic random access memory (DRAM). In this paper, we assume to use hybrid random access memory (RAM) and NVM architecture for the smart bracelet system.This paper presents a data management algorithm named bracelet power-aware data management (BPADM) based on the architecture. The BPADM can estimate the power consumption according to the memory access, such as sampling rate of data, and then determine the data should be stored in NVM or DRAM in order to satisfy low power. The experimental results show BPADM can reduce power consumption effectively for bracelet in normal and sleeping modes. 展开更多
关键词 HYBRID MEMORY non-volatile MEMORY (NVM) POWER-AWARE SMART BRACELET
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Endurance Awarded Compiling Optimization 认领
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作者 XU Chao GE Hongmei 《武汉大学学报:自然科学英文版》 CAS CSCD 2016年第5期399-406,共8页
The unbanlanced updating frequency of data reduces the endurance of the whole non-volatile main memory that affects the system’s stability significantly. Wear-leveling techniques are effective methods to increase the... The unbanlanced updating frequency of data reduces the endurance of the whole non-volatile main memory that affects the system’s stability significantly. Wear-leveling techniques are effective methods to increase the endurance of non-volatile memory. In this paper, we propose a pure software based low cost wear-leveling method, called writing balance aware mandatory rewriting insertion optimization(WBAMRI), to improve the dynamic wear-leveling techniques.This method uses the mandatory rewriting operation combined with simple dynamic wear-leveling techniques to switch the code area to hot area dynamically. From the result of simulation, we can see that: 1) Compared with dynamic wear-leveling techniques, our ware-leveling method makes the endurance of non-volatile memory 6 times longer; 2) Compared with static wear-leveling techniques, our method nearly gets the same endurance but without the complex hardware design and the lose of memory access performance. 展开更多
关键词 non-volatile memory ENDURANCE wear-leveling REWRITING
浅谈热泵技术在国内的发展 认领
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作者 赵诚忠 《现代工业经济和信息化》 2016年第12期51-54,共4页
介绍了热泵的起源、种类,分析了不同介质的热泵原理、性能,阐述了新技术在热泵系统中的应用,并对热泵前景进行了展望。
关键词 热泵 节能 环保 新技术 变频
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STT-MRAM存储器的研究进展 认领 被引量:5
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作者 赵巍胜 王昭昊 +3 位作者 彭守仲 王乐知 常亮 张有光 《中国科学:物理学、力学、天文学》 CSCD 北大核心 2016年第10期63-83,共21页
基于自旋转移矩的磁性随机存储器(Spin Transfer Torque-Based Magnetoresistive RAM,STT-MRAM)具有非易失性、可无限擦写和快速写入等优点而有望成为下一代低功耗通用存储器.尤其是近年来STT-MRAM商用芯片的成功问世进一步推动了该... 基于自旋转移矩的磁性随机存储器(Spin Transfer Torque-Based Magnetoresistive RAM,STT-MRAM)具有非易失性、可无限擦写和快速写入等优点而有望成为下一代低功耗通用存储器.尤其是近年来STT-MRAM商用芯片的成功问世进一步推动了该器件的研究与应用.本文首先阐述了MRAM的基本原理与发展历程,着重介绍了写入技术的演变以及磁各向异性的改善.然后总结了近期在3个领域的研究成果:(1)学术界开展了大量研究以探讨制备工艺和器件结构等因素对界面垂直磁各向异性的影响;(2)CoFeB-MgO双界面结构被提出,该结构在不增大写入电流的前提下增强了磁隧道结的热稳定性势垒;(3)新兴的自旋轨道矩写入方式引起了广泛的关注,该技术有望解决传统自旋转移矩所面临的速度瓶颈和势垒击穿风险.最后,本文扼要地介绍了STT-MRAM在芯片设计领域的最新进展. 展开更多
关键词 垂直磁各向异性 自旋转移矩 自旋轨道矩 双界面磁隧道结 磁性随机存储器 低功耗 非易失
非易失性纳米晶存储器的研究 认领 被引量:1
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作者 窦红真 《现代工业经济和信息化》 2016年第12期29-30,54共3页
从新型改进方法入手,重点研究了金属纳米晶结构的非易失性的存储器技术。
关键词 非易失性 金属纳米晶 存储器
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一种基于Nandflash的实时数据存储方案设计 认领 被引量:2
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作者 李秋华 周强 +3 位作者 文继锋 姜晓光 吴相楠 花俊 《工业控制计算机》 2016年第7期70-71,共2页
介绍了一种基于Nandflash的低成本实时数据存储方案,建立DRAM缓存并向应用提供直接内存访问接口,建立内存数据与Nandflash中数据的动态映射关系,周期将内存内变化数据回写到Nandflash,实现了数据实时存储并且掉电不丢失,满足了电力系统... 介绍了一种基于Nandflash的低成本实时数据存储方案,建立DRAM缓存并向应用提供直接内存访问接口,建立内存数据与Nandflash中数据的动态映射关系,周期将内存内变化数据回写到Nandflash,实现了数据实时存储并且掉电不丢失,满足了电力系统控制保护装置变位、动作等重要事件存储要求,具有较好的推广价值。 展开更多
关键词 实时存储 NANDFLASH 掉电不丢失
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