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Comparison of Epitaxial and Textured Ferroelectric BaTiO<sub>3</sub>Thin Films 认领
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作者 Baba Wague Nicolas Baboux +2 位作者 Pedro Rojo Romeo Yves Robach Bertrand Vilquin 《现代物理(英文)》 2020年第4期509-516,共8页
The properties of BaTiO3 (BTO) thin films deposited on different substrates by RF magnetron sputtering were investigated. Two representative substrates were selected and different heterostructures were studied. 1) SrT... The properties of BaTiO3 (BTO) thin films deposited on different substrates by RF magnetron sputtering were investigated. Two representative substrates were selected and different heterostructures were studied. 1) SrTiO3 (STO) single crystals as a bulk oxide reference material, and 2) silicon as a semiconductor. SrRuO3 (SRO) and Pt bottom electrodes were deposited on the silicon substrate. The BTO structural characterizations show that all the films have (001) crystallographic orientation. We have compared the electrical properties of the different samples: the same dielectric constant and polarization values were obtained independently of the nature of the substrate. 展开更多
关键词 FERROELECTRIC Barium TITANATE Thin Film Silicon Sputtering EPITAXY
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Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts 认领
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作者 Alexandre Bucamp Christophe Coinon +4 位作者 David Troadec Sylvie Lepilliet Gilles Patriarche Xavier Wallart Ludovic Desplanque 《纳米研究:英文版》 SCIE EI CAS CSCD 2020年第1期61-66,共6页
Three-dimensional(3D)nanoscale crystal shaping has become essential for the precise design of advanced electronic and quantum devices based on electrically gated transport.In this context,Ⅲ-Ⅴ semiconductor-based nan... Three-dimensional(3D)nanoscale crystal shaping has become essential for the precise design of advanced electronic and quantum devices based on electrically gated transport.In this context,Ⅲ-Ⅴ semiconductor-based nanowires with low electron effective mass and strong spin-orbit coupling are particularly investigated because of their exceptional quantum transport properties and the good electrostatic control they provide.Among the main challenges involved in the processing of these nanodevices are(i)the management of the gate stack which requires ex-situ passivation treatment to reduce the density of traps at the oxide/semiconductor interface,(ii)the ability to get good ohmic contacts for source and drain electrodes and(iii)the scalability and reliability of the process for the fabrication of complex architectures based on nanowire networks.In this paper,we show that selective area molecular beam epitaxy of in-plane InGaAs/InP core-shell nanowires with raised heavily doped source and drain contacts can address these different issues.Electrical characterization of the devices down to 4 K reveals the positive impact of the InP shell on the gate electrostatic control and effective electron mobility.Although comparable to the best reported values for In(Ga)As nanostructures grown on InP,this latter is severely reduced for sub-100 nm channel highlighting remaining issue to reach the ballistic regime. 展开更多
关键词 molecular beam epitaxy core-shell nanowire selective area growth effective electron mobility
Flexible inorganic oxide thin-film electronics enabled by advanced strategies 认领
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作者 Tianyao Zhang Guang Yao +2 位作者 Taisong Pan Qingjian Lu Yuan Lin 《半导体学报:英文版》 EI CAS CSCD 2020年第4期21-34,共14页
With the advent of human-friendly intelligent life,as well as increasing demands for natural and seamless humanmachine interactions,flexibility and wearability are among the inevitable development trends for electroni... With the advent of human-friendly intelligent life,as well as increasing demands for natural and seamless humanmachine interactions,flexibility and wearability are among the inevitable development trends for electronic devices in the future.Due to the advantages of rich physicochemical properties,flexible and stretchable inorganic oxide thin-film electronics play an increasingly important role in the emerging and exciting flexible electronic field,and they will act as a critical player in nextgeneration electronics.However,a stable strategy to render flexibility while maintaining excellent performance of oxide thin films is the most demanding and challenging problem,both for academic and industrial communities.Thus,this review focuses on the latest advanced strategies to achieve flexible inorganic oxide thin-film electronics.This review emphasizes the physical transferring strategies that are based on mechanical peeling and the chemical transferring strategies that are based on sacrificial layer etching.Finally,this review evaluates and summarizes the merits and demerits of these strategies toward actual applications,concluding with a future perspective into the challenges and opportunities for the next-generation of flexible inorganic oxide thin-film electronics. 展开更多
关键词 FLEXIBLE ELECTRONICS laser LIFT-OFF van der WAALS EPITAXY transfer PRINTING
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Large-scale multiferroic complex oxide epitaxy with magnetically switched polarization enabled by solution processing 认领
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作者 Cong Liu Feng An +23 位作者 Paria S.M.Gharavi Qinwen Lu Junkun Zha Chao Chen Liming Wang Xiaozhi Zhan Zedong Xu Yuan Zhang Ke Qu Junxiang Yao Yun Ou Zhiming Zhao Xiangli Zhong Dongwen Zhang Nagarajan Valanoor Lang Chen Tao Zhu Deyang Chen Xiaofang Zhai Peng Gao Tingting Jia Shuhong Xie Gaokuo Zhong Jiangyu Li 《国家科学评论:英文版》 SCIE EI CSCD 2020年第1期84-91,共8页
Complex oxides with tunable structures have many fascinating properties,though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach.Here we have successfully developed solutio... Complex oxides with tunable structures have many fascinating properties,though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach.Here we have successfully developed solution-based single-crystalline epitaxy for multiferroic(1-x)BiTi(1-y)/2FeyMg(1-y)/2O3–(x)CaTiO3(BTFM–CTO)solid solution in large area,confirming its ferroelectricity at the atomic scale with strong spontaneous polarization.Careful compositional tuning leads to a bulk magnetization of 0.07±0.035μB/Fe at room temperature,enabling magnetically induced polarization switching exhibiting a large magnetoelectric coefficient of 2.7–3.0×10^-7 s/m.This work demonstrates the great potential of solution processing in large-scale complex oxide epitaxy and establishes novel room-temperature magnetoelectric coupling in epitaxial BTFM–CTO film,making it possible to explore a much wider space of composition,phase,and structure that can be easily scaled up for industrial applications. 展开更多
关键词 complex oxide solution method EPITAXY MULTIFERROIC
Nanoparticle-Decorated Ultrathin La2O3 Nanosheets as an Effcient Electrocatalysis for Oxygen Evolution Reactions 认领
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作者 Guangyuan Yan Yizhan Wang +7 位作者 Ziyi Zhang Yutao Dong Jingyu Wang Corey Carlos Pu Zhang Zhiqiang Cao Yanchao Mao Xudong Wang 《纳微快报:英文版》 SCIE EI CAS CSCD 2020年第4期41-52,共12页
Electrochemical catalysts for oxygen evolution reaction are a critical component for many renewable energy applications. To improve their catalytic kinetics and mass activity are essential for sustainable industrial a... Electrochemical catalysts for oxygen evolution reaction are a critical component for many renewable energy applications. To improve their catalytic kinetics and mass activity are essential for sustainable industrial applications. Here, we report a rare-earth metal-based oxide electrocatalyst comprised of ultrathin amorphous La2O3 nanosheets hybridized with uniform La2O3 nanoparticles(La2O3@NP-NS). Significantly improved OER performance is observed from the nanosheets with a nanometer-scale thickness. The as-synthesized 2.27-nm La2O3@NP-NS exhibits excellent catalytic kinetics with an overpotential of 310 mV at 10 m A cm^-2, a small Tafel slope of 43.1 mV dec^-1, and electrochemical impedance of 38 Ω. More importantly, due to the ultrasmall thickness, its mass activity, and turnover frequency reach as high as 6666.7 A g^-1 and 5.79 s^-1, respectively, at an overpotential of 310 mV. Such a high mass activity is more than three orders of magnitude higher than benchmark OER electrocatalysts, such as IrO2 and RuO2. This work presents a sustainable approach toward the development of highly e cient electrocatalysts with largely reduced mass loading of precious elements. 展开更多
关键词 Oxygen evolution reaction MULTIPHASE hybrid Two-dimensional nanomaterials RARE-EARTH oxides Ionic layer EPITAXY
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Growth and Characteristics of n-VO2/p-GaN based Heterojunctions 认领
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作者 ZHANG Yadong ZHANG Bingye +2 位作者 WANG Minhuan FENG Yulin BIAN Jiming 《武汉理工大学学报:材料科学英文版》 SCIE EI CAS 2020年第2期342-347,共6页
n-VO2/p-GaN based oxide-nitride heterojunctions were realized by growing high quality VO2 films with precisely controlled thickness on p-GaN/sapphire substrates by oxide molecular beam epitaxy(O-MBE).The high crystall... n-VO2/p-GaN based oxide-nitride heterojunctions were realized by growing high quality VO2 films with precisely controlled thickness on p-GaN/sapphire substrates by oxide molecular beam epitaxy(O-MBE).The high crystalline quality of the n-VO2/p-GaN heterojunctions were confirmed by X-ray diffraction(XRD)and scanning electron microscope(SEM)analysis.The phase transition characteristics of the as-grown n-VO2/p-GaN heterojunctions were systematically investigated by temperature-dependent resistivity and infrared transmittance measurements.The results indicated that an excellent reversible metal-to-insulator(MIT)transition is observed with an abrupt change in both resistivity and infrared transmittance(IR)at 330 K,which was lower than the 341 K for bulk single crystal VO2.Remarkably,the resistivity-temperature curve was well consistent with that obtained from the temperature dependent IR transmittance.Meanwhile,the current-voltage characteristics originated from the n-VO2/p-GaN interface were demonstrated both before and after MIT of VO2 overlayer,which were attributed to the p-n junction behavior and Schottky contact character,respectively.The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements. 展开更多
关键词 vanadium oxide molecular beam epitaxy oxide-nitride heterojunctions metal-insulator transition
Structurally and chemically compatible BiInSe3 substrate for topological insulator thin films 认领
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作者 Xiong Yao Jisoo Moon +1 位作者 Sang-Wook Cheong Seongshik Oh 《纳米研究:英文版》 SCIE EI CAS CSCD 2020年第9期2541-2545,共5页
Quality of epitaxial films strongly depends on their structural and chemical match with the substrates:The more closely they match,the better the film quality is.Topological insulators(Tl)such as Bi2Se3 thin films are... Quality of epitaxial films strongly depends on their structural and chemical match with the substrates:The more closely they match,the better the film quality is.Topological insulators(Tl)such as Bi2Se3 thin films are of no exception.However,there do not exist commercial substrates that match with Tl films both structurally and chemically,at the level commonly available for other electronic materials.Here,we introduce BilnSe3 bulk crystal as the best substrate for Bi2Se3 thin films.These films exhibit superior surface morphology,lower defect density and higher Hall mobility than those on other substrates,due to structural and chemical match provided by the BilnSe3 substrate.BilnSe3 substrate could accelerate the advance of Tl research and applications. 展开更多
关键词 topological insulator SUBSTRATE MATCH EPITAXY Bi2Se3 BilnSe3
面向显示应用的微米发光二极管外延和芯片关键技术综述 认领
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作者 潘祚坚 陈志忠 +11 位作者 焦飞 詹景麟 陈毅勇 陈怡帆 聂靖昕 赵彤阳 邓楚涵 康香宁 李顺峰 王琦 张国义 沈波 《物理学报》 SCIE EI CAS CSCD 北大核心 2020年第19期324-347,共24页
随着显示技术的不断发展,高度微型化和集成化成为显示领域主要的发展趋势.微米发光二极管(lightemitting diode,LED)显示是一种由微米级半导体发光单元组成的阵列显示技术,在亮度、分辨率、对比度、能耗、使用寿命、响应速度和稳定性等... 随着显示技术的不断发展,高度微型化和集成化成为显示领域主要的发展趋势.微米发光二极管(lightemitting diode,LED)显示是一种由微米级半导体发光单元组成的阵列显示技术,在亮度、分辨率、对比度、能耗、使用寿命、响应速度和稳定性等方面相比于液晶显示和有机发光二极管显示均具有巨大的优势,应用前景十分广阔,同时也被视为下一代显示技术.目前商用的5G通信技术与显示领域的虚拟现实、增强现实和超高清视频等技术的结合,将进一步推动微米LED显示产业的发展.在面临发展机遇的同时,微米LED显示领域也存在着一些基础科学技术问题需要解决.本文主要总结了微米LED显示从2000年以来的一些研究进展,重点介绍了微米LED显示在外延生长和芯片工艺两方面存在的主要问题和可能的解决方案.在外延生长方面主要介绍了缺陷控制、极化电场控制和波长均匀性等研究进展,芯片工艺方面主要介绍了全彩色显示、巨量转移和检测技术等进展情况,并对微米LED显示在这两方面的发展趋势进行了讨论. 展开更多
关键词 微米发光二极管 显示 外延 芯片 检测
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Mn doping effects on the gate-tunable transport properties of Cd3As2 films epitaxied on GaAs 认领
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作者 Hailong Wang Jialin Ma +1 位作者 Qiqi Wei Jianhua Zhao 《半导体学报:英文版》 EI CAS CSCD 2020年第7期33-38,共6页
The Mn doping effects on the gate-tunable transport properties of topological Dirac semimetal Cd3As2 films have been investigated.Mn-doped Cd3As2 films are directly grown on GaAs(111)B substrates by molecular-beam epi... The Mn doping effects on the gate-tunable transport properties of topological Dirac semimetal Cd3As2 films have been investigated.Mn-doped Cd3As2 films are directly grown on GaAs(111)B substrates by molecular-beam epitaxy,during which the single crystal phase can be obtained with Mn concentration less than 2%.Shubnikov-de Haas oscillation and quantum Hall effect are observed at low temperatures,and electrons are found to be the dominant carrier in the whole temperature range.Higher Mn content results in smaller lattice constant,lower electron mobility and larger effective band gap,while the carrier density seems to be unaffected by Mn-doping.Gating experiments show that Shubnikov-de Haas oscillation and quantum Hall effect are slightly modulated by electric field,which can be explained by the variation of electron density.Our results provide useful information for understanding the magnetic element doping effects on the transport properties of Cd3As2 films. 展开更多
关键词 molecular-beam epitaxy Dirac semimetal Cd3As2 film Mn doping quantum transport
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Growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates by molecular beam epitaxy 认领
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作者 沈逸凡 尹锡波 +5 位作者 徐超凡 贺靖 李俊烨 李含冬 朱小红 牛晓滨 《中国物理B:英文版》 SCIE EI CAS CSCD 2020年第5期429-434,共6页
Epitaxial growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates are studied.The In2Se3 thin films grown below theβ-to-αphase transition temperature(453 K)are chara... Epitaxial growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates are studied.The In2Se3 thin films grown below theβ-to-αphase transition temperature(453 K)are characterized to be strainedβ-In2Se3 mixed with significantγ-In2Se3 phases.The pure-phased single-crystallineβ-In2Se3 can be reproducibly achieved by in situ annealing the as-deposited poly-crystalline In2Se3 within the phase equilibrium temperature window ofβ-In2Se3.It is suggeted that the observedγ-to-βphase transition triggered by quite a low annealing temperature should be a rather lowered phase transition barrier of the epitaxy-stabilized In2Se3 thin-film system at a state far from thermodynamic equilibrium. 展开更多
关键词 In2Se3 molecular beam epitaxy SINGLE-CRYSTALLINE annealing and quench phase transition
Van der Waals epitaxy: A new way for growth of Ⅲ-nitrides 认领
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作者 CHEN Yang JIA Yu-Ping +2 位作者 SHI Zhi-Ming SUN Xiao-Juan LI Da-Bing 《中国科学:技术科学英文版》 SCIE EI CAS CSCD 2020年第3期528-530,共3页
Inorganic semiconductor plays a key role for today’s technological progress [1–4]. Comparing with other organic semiconductors [5,6] and two-dimensional(2D) metal sulfides [7–10], Ⅲ-nitrides as direct bandgap semi... Inorganic semiconductor plays a key role for today’s technological progress [1–4]. Comparing with other organic semiconductors [5,6] and two-dimensional(2D) metal sulfides [7–10], Ⅲ-nitrides as direct bandgap semiconductors have achieved enormous success in commercial applications. 展开更多
关键词 A NEW WAY for GROWTH of VAN der WAALS EPITAXY nitrides
Influence comparison of N2 and NH3 nitrogen sources on AlN films grown by halide vapor phase epitaxy 认领
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作者 陈晶晶 黄俊 +2 位作者 苏旭军 牛牧童 徐科 《中国物理B:英文版》 SCIE EI CAS CSCD 2020年第7期428-432,共5页
A comparison of the nitrogen sources(N2 and NH3)influence on AlN films grown by high-temperature halide vapor phase epitaxy(HVPE)is reported.The x-ray rocking curves(XRCs)indicate that the full width at half maximum(F... A comparison of the nitrogen sources(N2 and NH3)influence on AlN films grown by high-temperature halide vapor phase epitaxy(HVPE)is reported.The x-ray rocking curves(XRCs)indicate that the full width at half maximum(FWHM)of(0002)plane for AlN films using N2 as nitrogen source is generally smaller than that using NH3.Optical microscope and atomic force microscope(AFM)results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10µm using N2 as the nitrogen source compared to that using NH3.Compared with one-step growth,two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N2 as the nitrogen source.These investigations reveal that using N2 as nitrogen source in HVPE growth of AlN is immature at present,but exhibits great potential. 展开更多
关键词 aluminum nitride halide vapor phase epitaxy surface structure nitrogen source
Boron-doped III–V semiconductors for Si-based optoelectronic devices 认领
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作者 Chao Zhao Bo Xu +1 位作者 Zhijie Wang Zhanguo Wang 《半导体学报:英文版》 EI CAS CSCD 2020年第1期28-38,共11页
Optoelectronic devices on silicon substrates are essential not only to the optoelectronic integrated circuit but also to low-cost lasers,large-area detectors,and so forth.Although heterogeneous integration of III-V se... Optoelectronic devices on silicon substrates are essential not only to the optoelectronic integrated circuit but also to low-cost lasers,large-area detectors,and so forth.Although heterogeneous integration of III-V semiconductors on Si has been welldeveloped,the thermal dissipation issue and the complicated fabrication process still hinders the development of these devices.The monolithic growth of III-V materials on Si has also been demonstrated by applying complicated buffer layers or interlayers.On the other hand,the growth of lattice-matched B-doped group-III-V materials is an attractive area of research.However,due to the difficulty in growth,the development is still relatively slow.Herein,we present a comprehensive review of the recent achievements in this field.We summarize and discuss the conditions and mechanisms involved in growing B-doped group-III-V materials.The unique surface morphology,crystallinity,and optical properties of the epitaxy correlating with their growth conditions are discussed,along with their respective optoelectronic applications.Finally,we detail the obstacles and challenges to exploit the potential for such practical applications fully. 展开更多
关键词 BGaAs SI PHOTODETECTOR EPITAXY
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Organometallic perovskite single crystals grown on lattice-matched substrate for photodetection 认领
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作者 Xin Wang Yuwei Li +8 位作者 Yubing Xu Yuzhu Pan Yao Wua Guanwen Li Wei Zhang Shuyi Ding Jing Chen Wei Lei Dewei Zhao 《纳米材料科学:英文版》 CAS 2020年第3期292-296,共5页
In this work,we demonstrate that an organometallic perovskite(OP)single crystal for effective photodetection can be grown on a gold(Au)-decorated substrate using liquid phase epitaxy.The covered gold could both contro... In this work,we demonstrate that an organometallic perovskite(OP)single crystal for effective photodetection can be grown on a gold(Au)-decorated substrate using liquid phase epitaxy.The covered gold could both control the shape of the epitaxial layer and act as its electrodes.An MAPbCl3 single crystal and an MAPbBr1.5Cl1.5 single crystal were used as the substrate and the epitaxial layer,respectively.The device,with an Au-perovskite-Au structure,can be fully characterized.Due to the high-quality epitaxial layer,the maximum external quantum efficiency(EQE)value is over 60%under the voltage of20 V.In addition,the response speed can reach 200 and 500 ns(ns)rise and fall,respectively.Our work provides an effective and promising method to fabricate efficient perovskite-based photodetectors. 展开更多
关键词 Perovskite single crystals Liquid phase epitaxy Ultraviolet detection
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Observation of pseudogap in SnSe2 atomic layers grown on graphite 认领
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作者 Ya-Hui Mao Huan Shan +5 位作者 Jin-Rong Wu Ze-Jun Li Chang-Zheng Wu Xiao-Fang Zhai Ai-Di Zhao Bing Wang 《物理学前沿:英文版》 SCIE CSCD 2020年第4期113-120,共8页
Superconducting metal dichalcogenides(MDCs)present several similarities to the other layered SI1-perconductors like cuprates.The superconductivity in atomically thin MDCs has been demonstrated by recent experiments,ho... Superconducting metal dichalcogenides(MDCs)present several similarities to the other layered SI1-perconductors like cuprates.The superconductivity in atomically thin MDCs has been demonstrated by recent experiments,however,the investigation of the superconductivity intertwined with other or-ders are scarce.Investigating the pseudogap in atomic layers of MDCs may help to understand the superconducting mechanism for these true two dimensional(2D)superconducting systemns.Herein we report a pseudogap opening in the tunneling spectra of thin layers of SnSe2 epitaxially grown on highly oriented pyrolytic graphite(HOPG)with scanning tunneling microscopy/spectroscopy(STM/STS).A significant V-shaped pseudogap was observed to open near the Fermi level(Er)in the sTS.And at elevated temperatures,the gap gradually evolves to a shallow dip.Our experimental observations provide direct evidence of a pseudogap state in the electron-doped SnSe2 atomic layers on the HOPG surface,which may stimulate further exploration of the mechanism of superconductivity at 2D limit in MDCs. 展开更多
关键词 scanning tunneling microscopy PSEUDOGAP metal dichalcogenides SnSe2 van der Waals epitaxy
蓝宝石衬底上NaOH辅助CVD法制备有序单层MoS2条带 认领
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作者 胡诗珂 李晶 +12 位作者 展肖依 王爽 雷龙彪 梁逸俭 康鹤 张燕辉 陈志蓥 隋妍萍 姜达 于广辉 彭松昂 金志 刘新宇 《中国科学:材料科学(英文版)》 SCIE EI CSCD 2020年第6期1065-1075,共11页
本文报道了一种在蓝宝石衬底上NaOH辅助化学气相沉积(CVD)生长有序排列单层MoS2条带的方法.MoS2条带具有优良的单晶性,其载流子迁移率为~150 cm^2V^-1s^-1,在550 nm波长下的光学响应为103 mA W^-1.单层MoS2条带在蓝宝石衬底上具有两种... 本文报道了一种在蓝宝石衬底上NaOH辅助化学气相沉积(CVD)生长有序排列单层MoS2条带的方法.MoS2条带具有优良的单晶性,其载流子迁移率为~150 cm^2V^-1s^-1,在550 nm波长下的光学响应为103 mA W^-1.单层MoS2条带在蓝宝石衬底上具有两种生长方式,其中一种为受层间范德华力以及晶格影响的取向生长,另一种为受蓝宝石台阶约束的平行生长.NaOH的引入量对MoS2形态与取向起重要作用,可以实现从取向性三角形晶畴,受衬底晶格影响的取向MoS2条带,受衬底台阶约束的平行条带,再到大尺寸杂乱取向三角形晶畴的连续可调.本文的结果有利于推动MoS2的基础研究及器件应用,也为合成其他一维和二维纳米结构开辟了新途径. 展开更多
关键词 MOS2 aligned ribbons vapor-liquid-solid step EPITAXY
分子束外延生长单层CrI3 认领
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作者 李培根 王聪 +4 位作者 张济海 陈沈威 郭东辉 季威 钟定永 《科学通报:英文版》 SCIE EI CAS CSCD 2020年第13期1064-1071,M0003,共9页
本文报道了在超高真空下,通过分子束外延生长单层CrI3在Au(111)和高定向石墨衬底上.基于扫描隧道显微镜和密度泛函理论计算,作者揭露了单层CrI3的表面原子结构以及其电子态的空间分布.此外,该工作还发现,在Au(111)上的单层CrI3具有不同... 本文报道了在超高真空下,通过分子束外延生长单层CrI3在Au(111)和高定向石墨衬底上.基于扫描隧道显微镜和密度泛函理论计算,作者揭露了单层CrI3的表面原子结构以及其电子态的空间分布.此外,该工作还发现,在Au(111)上的单层CrI3具有不同的超结构,而在高定向石墨衬底上只有本征的CrI3.另外,一个详细的Cr-ICr的铁磁超交换机制被揭露,这将对理解强的面外铁磁性具有很大的帮助.利用分子束外延在超高真空下生长单层CrI3提供了一个新的平台研究二维磁性,这对今后的二维磁性研究提供了一个新的路线. 展开更多
关键词 Two-dimensional magnetic materials CrI3 Molecular beam epitaxy Scanning tunneling microscopy
Search for 2D Ferromagnets:Molecular Beam Epitaxy is a Critical Tool 认领
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作者 Matthias Batzill 《中国物理快报:英文版》 SCIE CAS CSCD 2020年第8期1-2,共2页
Van der Waals materials with ferromagnetic properties have attracted recent interest because of their promise to enable combination of materials with atomically sharp interfaces,facilitating spin transport and spin in... Van der Waals materials with ferromagnetic properties have attracted recent interest because of their promise to enable combination of materials with atomically sharp interfaces,facilitating spin transport and spin injection across these interfaces. 展开更多
关键词 EPITAXY enable TOOL
Niobium doping induced mirror twin boundaries in MBE grown WSe2 monolayers 认领
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作者 Bo Wang Yipu Xia +4 位作者 Junqiu Zhang Hannu-Pekka Komsa Maohai Xie Yong Peng Chuanhong Jin 《纳米研究:英文版》 SCIE EI CAS CSCD 2020年第7期1889-1896,共8页
Mirror twin boundary(MTB)brings unique one-dimensional(1D)physics and properties into two-dimensional(2D)transition metal dichalcogenides(TMDCs),but they were rarely observed in non-Mo-based TMDCs.Herein,by post growt... Mirror twin boundary(MTB)brings unique one-dimensional(1D)physics and properties into two-dimensional(2D)transition metal dichalcogenides(TMDCs),but they were rarely observed in non-Mo-based TMDCs.Herein,by post growth Nb doping,high density 4|4E-W and 4|4P-Se mirror twin boundaries(MTBs)were introduced into molecular beam epitaxy(MBE)grown WSe2 monolayers.Of them,4|4E-W MTB with a novel structure was discovered experimentally for the first time,while 4|4P-Se MTBs present a random permutations of W and Nb,forming a 1D alloy system.Comparison between the doped and non-doped WSe2 confirmed that Nb dopants are essential for MTB formation.Furthermore,quantitative statistics reveal the areal density of MTBs is directly proportional to the concentration of Nb dopants.To unravel the injection pathway of Nb dopants,first-principles calculations about a set of formation energies for excess Nb atoms with different configurations were conducted,based on which a model explaining the origin of MTBs introduced by excess metal was built.We conclude that the formation of MTBs is mainly driven by the collective evolution of excess Nb atoms introduced into the lttice of host WSe2 crystal and subsequent displacement of metal atoms(W or Nb).This study provides a novel way to tailor the MTBs in 2D TMDC materials via proper metal doping and presents new opportunities for exploring the intriguing properties. 展开更多
关键词 mirror twin boundaries niobium doping molecular beam epitaxy transition metal dichalcogenides NIOBIUM tungsten diselenide
Application of halide vapor phase epitaxy for the growth of ultrawide band gap Ga2O3 认领
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作者 Xiangqian Xiu Liying Zhang +3 位作者 Yuewen Li Zening Xiong Rong Zhang Youdou Zheng 《半导体学报:英文版》 EI CAS CSCD 2019年第1期57-62,共6页
Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth o... Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga2O3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga2O3 substrates and for the fabrication of high power β-Ga2O3 devices. 展开更多
关键词 HALIDE vapor phase EPITAXY GA2O3 SCHOTTKY barrier DIODES EPITAXY GROWTH
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