期刊文献+

Silicon on Insulator with Highly Uniform Top Si Fabricated by H/He Coimplantation

收藏 分享 导出
摘要 Silicon on insulator with highly uniform top Si is fabricated by co-implantation of H+and He+ions. Compared with the conventional ion-slicing process with H implantation only, the co-implanted specimens whose He depth is deeper than H profile have the top Si layer with better uniformity after splitting. In addition, the splitting occurs at the position that the maximum concentration peak of H overlaps with the secondary concentration peak of He after annealing. It is suggested that the H/He co-implantation technology is a promising approach for fabricating fully depleted silicon on insulator.
作者 苏鑫 高楠 陈猛 徐洪涛 魏星 狄增峰 Xin Su;Nan Gao;Meng Chen;Hong-Tao Xu;Xing Wei;Zeng-Feng Di(不详)
出处 《中国物理快报:英文版》 SCIE CAS CSCD 2019年第6期103-106,共4页 Chinese Physics Letters
基金 the National Natural Science Foundation of China under Grant No 61674159 the Program of National Science and Technology Major Project under Grant No 2016ZX02301003 the Shanghai Academic/Technology Research Leader under Grant Nos 16XD1404200 and 17XD1424500 the Key Research Project of Frontier Science of Chinese Academy of Sciences under Grant No QYZDB-SSW-JSC021 the Strategic Priority Research Program (B) of the Chinese Academy of Sciences under Grant No XDB30030000.
作者简介 Corresponding author:魏星.Email:xwei@mail.sim.ac.cn;Corresponding author:狄增峰.Email:zfdi@mail.sim.ac.cn.
  • 相关文献
投稿分析

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部 意见反馈
新型冠状病毒肺炎防控与诊疗专栏