期刊文献+

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation

收藏 分享 导出
摘要 A power metal-oxide-semiconductor field-effect transistor (MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability.The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied.To analyze the electric field,the drift region is segmented into four regions,where the conformal mapping method based on Schwarz–Christoffel transformation has been applied.According to the analysis,the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench.The analytical results of the electric field and the potential models are in good agreement with the simulation results.
作者 汪志刚 廖涛 王亚南 Zhi-Gang Wang;Tao Liao;Ya-Nan Wang(不详)
出处 《中国物理B:英文版》 SCIE EI CAS CSCD 2019年第5期366-373,共8页 Chinese Physics B
基金 the National Natural Science Foundation of China (Grant No.61404110) the National Higher-education Institution General Research and Development Project,China (Grant No.2682014CX097).
作者简介 Corresponding.author:汪志刚.E-mail:zhigangwang@swjtu.edu.cn.
  • 相关文献
投稿分析

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部 意见反馈
新型冠状病毒肺炎防控与诊疗专栏