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CdS晶片化学机械抛光的表面粗糙度研究 预览

Study of Surface Roughness of CdS in CMP
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摘要 研究了化学机械抛光(CMP)过程中抛光液组分对硫化镉(CdS)晶片表面粗糙度的影响。通过分析磨粒浓度、氧化剂种类及浓度、pH值对CdS晶片表面粗糙度的影响后,得到了用于CdS晶片cd面CMP的抛光液配比,即磨粒SiO2浓度为20%,氧化剂NaClO的浓度为2.5%,pH值为10.64。在优化其他工艺条件下,采用该抛光液对CdS晶片Cd面进行抛光,可以获得高质量的抛光表面,经原子力显微镜(AFM)测试,在10μm×10μm的区域内,Cd面表面粗糙度Ra仅为0.171nm。该抛光液也适用于S面的抛光,S面表面粗糙度Ra可达到0.568nm,从而达到双面共用的效果。 This paper studies how the composition of polishing slurry affects the surface roughness of the CdS wafer in CMP. By analyzing the influence of the concentration of abrasives, the variety and concentration of oxidants, and the pH value, we obtained the composition of polishing slurry that was used for the Cd surface of the CdS wafer in CMP: The concentration of the abrasive SiO2 is 20%; the oxidant is NaClO with a concentration of 2.5%; and the pH value is 10.64. Under optimized process conditions, the high-quality polished Cd surface of the CdS wafer can be obtained using the aforementioned polishing slurry Through testing by AFM in a randomly selected 10μm×10μm area, the average roughness (Ra) of the Cd surface is only 0.171 nm. It can also be used for the S face in CMP. The average roughness (Ra) of the S face is 0.568 nm, which means the composition of polishing slurry is suitable for both faces of the CdS wafer in CMP.
作者 李晖 徐世海 高飞 徐永宽 LI Hui, XU Shihai, GAO Fei, XU Yongkuan (The 46^th Research Institute, China Electronic Technology Group Corporation, Tianjin 300220, China)
出处 《红外技术》 CSCD 北大核心 2018年第10期931-935,共5页 Infrared Technology
关键词 CMP CdS晶片 Cd面 抛光液 表面粗糙度 CMP CdS wafer Cd surface polishing slurry surface roughness
作者简介 李晖(1985-),男(蒙古族),河北承德人,工程师,现从事宽禁带半导体和Ⅱ-Ⅵ族化合物半导体加工的研究。E-mail:lihui46yfo@126.com。
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